Geant4 based simulation of the Water Cherenkov Detectors of the LAGO Project

To characterize the signals registered by the different types of water Cherenkov detectors (WCD) used by the Latin American Giant Observatory (LAGO) Project, it is necessary to develop detailed simulations of the detector response to the flux of secondary particles at the detector level. These particles are originated during the interaction of cosmic rays with the atmosphere. In this context, the LAGO project aims to study the high energy component of gamma rays bursts (GRBs) and space weather phenomena by looking for the solar modulation of galactic cosmic rays (GCRs). Focus in this, a complete and complex chain of simulations is being developed that account for geomagnetic effects, atmospheric reaction and detector response at each LAGO site. In this work we shown the first steps of a GEANT4 based simulation for the LAGO WCD, with emphasis on the induced effects of the detector internal diffusive coating.Comment: 5 pages, 4 figures, Proceedings X SILAFAE Medellin-2014. To appear in Nuclear Physics B - Proceedings Supplement

Electron gas at the interface between two antiferromagnetic insulating manganites

We study theoretically the magnetic and electric properties of the interface between two antiferromagnetic and insulating manganites: La0.5Ca0.5MnO3, a strong correlated insulator, and CaMnO3, a band-insulator. We find that a ferromagnetic and metallic electron gas is formed at the interface between the two layers. We confirm the metallic character of the interface by calculating the in-plane conductance. The possibility of increasing the electron gas density by selective doping is also discussed.Comment: 6 pages, including 9 figure

Theory of one and two donors in Silicon

We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell correction and a configuration interaction account of the electron-electron correlations. We also derive insightful, yet less accurate, analytical approximations and discuss their validity and limitations -- in particular, for a donor pair, we discuss the single orbital LCAO method, the Huckel approximation and the Hubbard model. Finally we discuss the connection between these results and recent experiments on few dopant devices.Comment: 13 pages, 6 figure

Effect of strain on the orbital and magnetic ordering of manganite thin films and their interface with an insulator

We study the effect of uniform uniaxial strain on the ground state electronic configuration of a thin film manganite. Our model Hamiltonian includes the double-exchange, the Jahn-Teller electron-lattice coupling, and the antiferromagnetic superexchange. The strain arises due to the lattice mismatch between an insulating substrate and a manganite which produces a tetragonal distortion. This is included in the model via a modification of the hopping amplitude and the introduction of an energy splitting between the Mn e_g levels. We analyze the bulk properties of half-doped manganites and the electronic reconstruction at the interface between a ferromagnetic and metallic manganite and the insulating substrate. The strain drives an orbital selection modifying the electronic properties and the magnetic ordering of manganites and their interfaces.Comment: 8 pages, 8 figure

Dynamical description of the buildup process in resonant tunneling: Evidence of exponential and non-exponential contributions

The buildup process of the probability density inside the quantum well of a double-barrier resonant structure is studied by considering the analytic solution of the time dependent Schr\"{o}dinger equation with the initial condition of a cutoff plane wave. For one level systems at resonance condition we show that the buildup of the probability density obeys a simple charging up law, $| \Psi (\tau) / \phi | =1-e^{-\tau /\tau_0},$ where $\phi$ is the stationary wave function and the transient time constant $\tau_0$ is exactly two lifetimes. We illustrate that the above formula holds both for symmetrical and asymmetrical potential profiles with typical parameters, and even for incidence at different resonance energies. Theoretical evidence of a crossover to non-exponential buildup is also discussed.Comment: 4 pages, 2 figure

Algebraic computation of some intersection D-modules

Let $X$ be a complex analytic manifold, $D\subset X$ a locally quasi-homogeneous free divisor, $E$ an integrable logarithmic connection with respect to $D$ and $L$ the local system of the horizontal sections of $E$ on $X-D$. In this paper we give an algebraic description in terms of $E$ of the regular holonomic D-module whose de Rham complex is the intersection complex associated with $L$. As an application, we perform some effective computations in the case of quasi-homogeneous plane curves.Comment: 18 page

Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures.Comment: 8 pages, including 5 figures. v2: Minor clarifying changes in the text and figures. Change of title. As published in PR